ty n-channel mos fet RTR025N03 z structure z external dimensions (unit : mm) z features 1) low on-resistance. 2) space saving ? small surface mount package (tsmt3). 3) low voltage drive (2.5v drive). each lead has same dimensions (1) gate z applications (2) source (3) dr ain tsmt3 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 ( 2 ) ( 1 ) ( 3 ) 2.9 2.8 1.9 1.6 0.950.95 0.4 abbreviated symbol : qz switching z packaging specifications and h fe z inner circuit (1) gate (2) source (3) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (3) (1) (2) package code taping basic ordering unit (pieces) RTR025N03 tl 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) 30 150 ? 55 to + 150 12 2.5 10 0.8 10 1.0 z thermal resistance parameter c/w rth(ch-a) symbol limits unit channel to ambient 125 ? mounted on a ceramic board ? product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 av gs =12v, v ds =0v v dd 15v 30 ?? vi d = 1ma, v gs =0v ?? 1 av ds = 30v, v gs =0v 0.5 ? 1.5 v v ds = 10v, i d = 1ma ? 66 92 i d = 2.5a, v gs = 4.5v ? 70 98 m ? m ? m ? i d = 2.5a, v gs = 4v ? 95 133 i d = 2.5a, v gs = 2.5v 2.0 ?? sv ds = 10v, i d = 2.5a ? 220 ? pf v ds = 10v ? 60 35 ? pf v gs =0v ? 9 ? pf f=1mhz ? 15 ? ns ? 25 ? ns ? 10 ? ns ? 3.3 ? ns ? 0.7 4.6 nc ? 1.0 ? nc v gs = 4.5v ?? nc i d = 2.5a v dd 15 v i d = 1.25a v gs = 4.5v r l =12 ? r g =10 ? r l =6 ? r g =10 ? z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.2 v i s = 0.8a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions RTR025N03 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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